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| Advance Product Information September 22, 2003 Bessel Filter * * * * * * TGB2010-EPU Key Features and Performance 6, 7, 8, 9, 10 & 11 GHz Filters <1.25ps Group Delay to Fo >15dB Return Loss to 2Fo Filter Bandwidth 0.5 GHz 3MI Technology Chip Dimensions: 0.49 x 0.49 x 0.10 mm (0.019 x 0.019 x 0.004 inches) Preliminary Measured Performance 0 -1 -2 -3 Gain (dB) -4 -5 -6 -7 -8 -9 -10 0 1 2 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 11 GHz 3 4 5 6 7 8 9 10 11 12 13 14 15 Frequency (GHz) 6 GHz 7 GHz 45 40 Group Delay (ps) 35 30 25 20 15 10 0 2 4 6 9 GHz 8 GHz 10 GHz 11 GHz 8 10 12 14 16 18 20 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 22, 2003 TGB2010-EPU TABLE I MAXIMUM RATINGS Symbol PIN TM TSTG 1/ Parameter Input Continuous Wave Power Mounting Temperature (30 Seconds) Storage Temperature Value TBD 320 C -65 to 150 C 0 0 Notes 1/ These ratings represent the maximum operable values for this device TABLE II PART NUMBER DESIGNATIONS Part No TGB2010-00-EPU TGB2010-06-EPU TGB2010-07-EPU TGB2010-08-EPU TGB2010-09-EPU TGB2010-10-EPU TGB2010-11-EPU Cutoff Frequency Thru 6 0.5 GHz 7 0.5 GHz 8 0.5 GHz 9 0.5 GHz 10 0.5 GHz 11 0.5 GHz Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 22, 2003 Measured Performance 0 -2 -4 -6 TGB2010-EPU Gain (dB) -8 -10 -12 -14 -16 -18 -20 0 0 -5 10 GHz 6 GHz 7 GHz 8 GHz 9 GHz 2 4 6 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 11 GHz 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz) Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 0 2 11 GHz 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 22, 2003 TGB2010-EPU Measured Performance 45 6 GHz 40 7 GHz Group Delay (ps) 35 30 25 20 15 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 9 GHz 8 GHz 10 GHz 11 GHz Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 22, 2003 TGB2010-EPU Mechanical Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 22, 2003 TGB2010-EPU Assembly Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 22, 2003 TGB2010-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com |
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